Impact of the HfO^sub 2^/Al^sub 2^O^sub 3^ stacking order on unipolar RRAM

In this work, Ni/HfO2/Al2O3/n+-Si and Ni/Al2O3/HfO2/n+-Si RRAM devices have been investigated with the purpose to determine the role of the HfO2/Al2O3 stacking order in the electrical properties and the resistive switching phenomena in unipolar RRAM devices. The study of the current-voltage characte...

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Bibliographic Details

Published in:	Microelectronic engineering Vol. 178; p. 168
Main Authors:	Mallol, MM, Gonzalez, MB, Campabadal, F
Format:	Journal Article
Language:	English
Published:	Amsterdam Elsevier BV 25-06-2017
Subjects:	Aluminum oxide Current voltage characteristics Devices Electric contacts Electric properties Electrical properties Hafnium oxide Low resistance Point contact Stacking Switching Temperature
Online Access:	Get full text
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