Impact of the HfO^sub 2^/Al^sub 2^O^sub 3^ stacking order on unipolar RRAM

Impact of the HfO^sub 2^/Al^sub 2^O^sub 3^ stacking order on unipolar RRAM

In this work, Ni/HfO2/Al2O3/n+-Si and Ni/Al2O3/HfO2/n+-Si RRAM devices have been investigated with the purpose to determine the role of the HfO2/Al2O3 stacking order in the electrical properties and the resistive switching phenomena in unipolar RRAM devices. The study of the current-voltage characte...

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Bibliographic Details
Published in:Microelectronic engineering Vol. 178; p. 168
Main Authors: Mallol, MM, Gonzalez, MB, Campabadal, F
Format: Journal Article
Language:English
Published: Amsterdam Elsevier BV 25-06-2017
Subjects:
Aluminum oxide
Current voltage characteristics
Devices
Electric contacts
Electric properties
Electrical properties
Hafnium oxide
Low resistance
Point contact
Stacking
Switching
Temperature
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Summary:In this work, Ni/HfO2/Al2O3/n+-Si and Ni/Al2O3/HfO2/n+-Si RRAM devices have been investigated with the purpose to determine the role of the HfO2/Al2O3 stacking order in the electrical properties and the resistive switching phenomena in unipolar RRAM devices. The study of the current-voltage characteristics at different temperatures has shown that Poole-Frenkel and Fowler-Nordheim tunnelling are the main conduction mechanisms in fresh devices, while the quantum point contact conduction dominates in the low resistance state. Furthermore, the resistive switching behaviour has been investigated for more than 103 cycles. The results show that there is no significant impact of the stacking order on the resistive switching properties.
ISSN:0167-9317
1873-5568