Experimental band alignment of Ta^sub 2^O^sub 5^/GaN for MIS-HEMT applications

The band alignment of Ta2O5/GaN has been measured experimentally. The HCl cleaning has been found to be effective in removing oxygen from the GaN surface and was used prior to deposition of the Ta2O5 films by radio frequency magnetron sputtering. Variable angle spectroscopic ellipsometry was perform...

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Bibliographic Details

Published in:	Microelectronic engineering Vol. 178; p. 178
Main Authors:	Sawangsri, K, Das, P, Supardan, SN, Mitrovic, IZ, Hall, S, Mahapatra, R, Chakraborty, AK, Treharne, R, Gibbon, J, Dhanak, VR, Durose, K, Chalker, PR
Format:	Journal Article
Language:	English
Published:	Amsterdam Elsevier BV 25-06-2017
Subjects:	Alignment Band gap Electrons Magnetron sputtering Oxygen Photoelectron spectroscopy Spectroellipsometry Tantalum oxides Valence band
Online Access:	Get full text
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