Suppression of a Charge Density Wave in ([SnSe]^sub 1.15^)^sub 1^(VSe^sub 2^)^sub 1^ Ferecrystals Via Isoelectronic Doping with Ta

• Published in: Journal of electronic materials Vol. 45; no. 10; p. 4898
• Main Authors: Westover, Richard D, Mitchson, Gavin, Hite, Omar K, Hill, Krista, Johnson, David C
• Format: Journal Article
• Language: English
• Published: Warrendale Springer Nature B.V 01-10-2016
• Subjects: Crystal lattices; Diffraction; Multilayered thin films; Semiconductor doping
• ISSN: 0361-5235; 1543-186X
• DOI: 10.1007/s11664-016-4662-7

The charge density wave (CDW) transition in (SnSe)1.15VSe2 ferecrystals was investigated through the systematic addition of isoelectronic Ta dopants. (SnSe)1.15 (V1-xTax)Se2 ferecrystals with alloyed V1-xTaxSe2 layers, where x = 0, 0.04, 0.06, 0.07, and 0.09, were prepared from amorphous precursors using the modulated elemental reactants (MER) method. Structural analysis of the ferecrystals, via x-ray diffraction, shows systematic changes in lattice parameters with increasing Ta content consistent with the formation of alloyed V1-xTaxSe2 layers. Temperature-dependent electrical resistivity and Hall coefficient measurements of the prepared ferecrystals reveal that both the magnitude and onset temperature of the CDW transition are decreased with the addition of Ta, indicating that the ferecrystal CDW transition, although notably stableto volume defects produced by non-stoichiometric films, is more susceptible to destabilization with the addition of isoelectronic dopants.