Ar(3P2) induced cheminal vapor deposition of hydrogenated amorphous silicon

Ar(3P2) induced cheminal vapor deposition of hydrogenated amorphous silicon

Saved in:
Bibliographic Details
Published in:Applied physics letters Vol. 46; no. 6; pp. 584 - 586
Main Authors: TOYOSHIMA, Y, KUMATA, K, ITOH, U, ARAI, K, MATSUDA, A, WASHIDA, N, INOUE, G, KATSUUMI, K
Format: Journal Article
Language:English
Published: Melville, NY American Institute of Physics 1985
Subjects:
Condensed matter: structure, mechanical and thermal properties
Exact sciences and technology
Physics
Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)
Thin film structure and morphology
Non metal
Impurity
Hydrogen
Silicon
Amorphous state
Photochemical reaction
Argon
Experimental study
Chemical vapor deposition
Thin film
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
ISSN:0003-6951
1077-3118