Strained layer GaAs1-yPy-AlGaAs and InxGa1-xAs-AlGaAs quantum well diode lasers

Saved in:

Bibliographic Details
Published in:	Applied physics letters Vol. 63; no. 17; pp. 2312 - 2314
Main Authors:	VAN DER POEL, C. J, AMBROSIUS, H. P. M. M, LINDERS, R. W. M, PEETERS, R. M. L, ACKET, G. A, KRIJN, M. P. C. M
Format:	Journal Article
Language:	English
Published:	Melville, NY American Institute of Physics 1993
Subjects:	Exact sciences and technology Fundamental areas of phenomenology (including applications) Lasers Optics Physics Semiconductor lasers; laser diodes Aluminium arsenides Gallium arsenides Ternary compounds Quantum wells Theoretical study Instrumentation Threshold current Experimental study Laser diodes Indium arsenides Gallium phosphides Semiconductor lasers Strained layer Temperature range
Online Access:	Get full text
Tags:	Add Tag No Tags, Be the first to tag this record!

Description
ISSN:	0003-6951 1077-3118