High-Performance GaN-Based Nanochannel FinFETs With/Without AlGaN/GaN Heterostructure : GaN ELECTRONIC DEVICES

• Published in: IEEE transactions on electron devices Vol. 60; no. 10; pp. 3012 - 3018
• Main Authors: IM, Ki-Sik, WON, Chul-Ho, JO, Young-Woo, LEE, Jae-Hoon, BAWEDIN, Maryline, CRISTOLOVEANU, Sorin, LEE, Jung-Hee
• Format: Journal Article
• Language: English
• Published: New York, NY Institute of Electrical and Electronics Engineers 2013
• Subjects: Applied sciences; Compound structure devices; Electronics; Exact sciences and technology; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Transistors; Ternary compound; Performance evaluation; Voltage threshold; MOSFET; Binary compound; 2-D electron gas (2-DEG); Operating mode; Gallium nitride; AlGaN/GaN; High electron mobility transistor; triple gate; junctionless; Heterojunction; MOS technology; High performance; nanochannel; high-electron mobility transistor (HEMT); Aluminium nitride; Doped materials; Dual gate transistor; Two-dimensional electron gas; III-V compound; Self aligned technology; Field effect transistor; High power; fin-shaped field-effect transistor (FinFET); Heterostructures
• ISSN: 0018-9383; 1557-9646