Modeling of the output characteristics of advanced n-MOSFETs after a severe gate-to-channel dielectric breakdown Insulating Films on Semiconductors 2013

• Published in: Microelectronic engineering Vol. 109; pp. 322 - 325
• Main Authors: MIRANDA, E, KAWANAGO, T, KAKUSHIMA, K, SUNE, J, IWAI, H
• Format: Journal Article
• Language: English
• Published: Amsterdam Elsevier 2013
• Subjects: Applied sciences; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Dielectric breakdown and space-charge effects; Dielectric properties of solids and liquids; Dielectrics, piezoelectrics, and ferroelectrics and their properties; Electronic equipment and fabrication. Passive components, printed wiring boards, connectics; Electronics; Exact sciences and technology; Fractures; Mechanical properties and methods of testing. Rheology. Fracture mechanics. Tribology; Metals. Metallurgy; Physics; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Transistors; Current source; MOS technology; MOSFET; Electric breakdown; Oxide layer; Potentiometer; Connection; Power electronics; Drain; Oxide reliability; Failures; Electrical model; Modeling; Lanthanum oxide; MOS; Resistor network; Non linear model; MOS transistor; Reliability; Oxide breakdown; Transconductance; Electrical characteristic; Damaging
• ISSN: 0167-9317; 1873-5568