Electrical characterization of gadolinium oxide deposited by high pressure sputtering with in situ plasma oxidation Insulating Films on Semiconductors 2013

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Bibliographic Details
Published in:	Microelectronic engineering Vol. 109; pp. 236 - 239
Main Authors:	ÁNGELA PAMPILLÓN, María, FEIJOO, Pedro Carlos, SAN ANDRÉS, Enrique
Format:	Journal Article
Language:	English
Published:	Amsterdam Elsevier 2013
Subjects:	Applied sciences Condensed matter: structure, mechanical and thermal properties Corrosion Corrosion mechanisms Cross-disciplinary physics: materials science; rheology Deposition by sputtering Dielectric, amorphous and glass solid devices Electronics Exact sciences and technology High-pressure and shock-wave effects in solids and liquids Materials science Mechanical and acoustical properties of condensed matter Metals. Metallurgy Methods of deposition of films and coatings; film growth and epitaxy Physics Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Gate current Density of states In situ Gadolinium Leakage currents Optimization Metallic thin films Microelectronic fabrication Low current Oxidation Silicon Argon Hysteresis Electrical characteristic Gadolinium oxide High resolution electron microscopy Voltage dependence Oxide layer Interface states High pressure sputtering Plasma oxidation High pressure Thickness Gadolinium oxides Charge carrier trapping Capacitance High k dielectric Sputter deposition MIS capacitors
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