Electrical characterization of gadolinium oxide deposited by high pressure sputtering with in situ plasma oxidation Insulating Films on Semiconductors 2013

• Published in: Microelectronic engineering Vol. 109; pp. 236 - 239
• Main Authors: ÁNGELA PAMPILLÓN, María, FEIJOO, Pedro Carlos, SAN ANDRÉS, Enrique
• Format: Journal Article
• Language: English
• Published: Amsterdam Elsevier 2013
• Subjects: Applied sciences; Condensed matter: structure, mechanical and thermal properties; Corrosion; Corrosion mechanisms; Cross-disciplinary physics: materials science; rheology; Deposition by sputtering; Dielectric, amorphous and glass solid devices; Electronics; Exact sciences and technology; High-pressure and shock-wave effects in solids and liquids; Materials science; Mechanical and acoustical properties of condensed matter; Metals. Metallurgy; Methods of deposition of films and coatings; film growth and epitaxy; Physics; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Gate current; Density of states; In situ; Gadolinium; Leakage currents; Optimization; Metallic thin films; Microelectronic fabrication; Low current; Oxidation; Silicon; Argon; Hysteresis; Electrical characteristic; Gadolinium oxide; High resolution electron microscopy; Voltage dependence; Oxide layer; Interface states; High pressure sputtering; Plasma oxidation; High pressure; Thickness; Gadolinium oxides; Charge carrier trapping; Capacitance; High k dielectric; Sputter deposition; MIS capacitors
• ISSN: 0167-9317; 1873-5568