Limitations of Field Plate Effect Due to the Silicon Substrate in AIGaN/GaN/AIGaN DHFETs

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Bibliographic Details
Published in:	IEEE transactions on electron devices Vol. 57; no. 12; pp. 3333 - 3339
Main Authors:	VISALLI, Domenica, VAN HOVE, Marleen, GERMAIN, Marianne, BORGHS, Gustaaf, DERLUYN, Joff, SRIVASTAVA, Puneet, MARCON, Denis, DAS, Jo, REINIER LEYS, Maarten, DEGROOTE, Stefan, KAI CHENG, VANDENPLAS, Erwin
Format:	Journal Article
Language:	English
Published:	New York, NY Institute of Electrical and Electronics Engineers 2010
Subjects:	Applied sciences Electronics Exact sciences and technology Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Transistors Ternary compound Binary compound Aluminium nitride Gallium nitride III-V compound Breakdown voltage Electric field Field distribution field plate (FP) Disruptive voltage GaN double heterostructures field effect transistor (DHFET) Silicon Heterojunction field effect transistor Damaging Passivation silicon substrate
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ISSN:	0018-9383 1557-9646