Improving solar grade silicon by controlling extended defect generation and foreign atom defect interactions : Polycrystalline Semiconductors

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Bibliographic Details
Published in:	Applied physics. A, Materials science & processing Vol. 96; no. 1; pp. 207 - 220
Main Authors:	MÖLLER, H. J, KADEN, T, SCHOLZ, S, WÜRZNER, S
Format:	Journal Article
Language:	English
Published:	Heidelberg Springer 2009
Subjects:	Applied sciences Condensed matter: structure, mechanical and thermal properties Cross-disciplinary physics: materials science; rheology Defects and impurities in crystals; microstructure Energy Exact sciences and technology Growth from melts; zone melting and refining Materials science Methods of crystal growth; physics of crystal growth Natural energy Photovoltaic conversion Physics Solar cells. Photoelectrochemical cells Solar energy Stacking faults and other planar or extended defects Structure of solids and liquids; crystallography Solar cell Impurity Crystal defect interaction Polycrystal Defect recombination Silicon Crystal defect Extended defect Contamination Defect formation Crystal growth from melts
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ISSN:	0947-8396 1432-0630