Investigation of low dielectric carbon-doped silicon oxide films prepared by PECVD using methyltrimethoxysilane precursor

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Bibliographic Details
Published in:	Thin solid films Vol. 506-07; pp. 50 - 54
Main Authors:	CHANG SIL YANG, YOUNG HUN YU, LEE, Kwang-Man, LEE, Heon-Ju, CHI KYU CHOI
Format:	Conference Proceeding
Language:	English
Published:	Lausanne Elsevier Science 2006
Subjects:	Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.) Condensed matter: structure, mechanical and thermal properties Cross-disciplinary physics: materials science; rheology Defects and impurities in crystals; microstructure Doping and impurity implantation in other materials Exact sciences and technology Materials science Methods of deposition of films and coatings; film growth and epitaxy Physics Structure of solids and liquids; crystallography SiOC(-H) film Plasma Inorganic compounds Semiconductor materials Films Crystallization Doping Binary compounds MTMS Infrared spectra Experimental study Carbon additions Precursor CVD Low-k Inductively coupled plasma Quantity ratio Silicon oxides PECVD Thermal annealing ICPCVD Permittivity
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ISSN:	0040-6090 1879-2731