Performance of AlGaN/GaN HFETs fabricated on 100mm silicon substrates for wireless basestation applications

• Main Authors: BROWN, J. D, NAGY, W, THERRIEN, R. J, HANSON, A. W, VESCAN, A, SINGHAL, S, PETERS, S, CHAUDHARI, A, LI, T, NICHOLS, R, BORGES, R, RAJAGOPAL, P, JOHNSON, J. W
• Format: Conference Proceeding
• Language: English
• Published: Piscataway NJ IEEE 2004
• Subjects: Applied sciences; Electronic equipment and fabrication. Passive components, printed wiring boards, connectics; Electronics; Exact sciences and technology; Other multijunction devices. Power transistors. Thyristors; Radiocommunications; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Telecommunications; Telecommunications and information theory; Transistors; Transmitters. Receivers; Performance evaluation; Output power; Lateral diffusion; Base station; Wireless telecommunication; Microwave power transistors; Wide band transmission; Durability; Power supply; High temperature; Addressing; Output stage; Transceiver; Field effect transistor; Code division multiple access; Heterojunction field effect transistor; Reliability
• ISBN: 0780383311; 9780780383319