Multichannel process monitor for real-time film thickness and rate measurements in dry etching and deposition: Selected papers revised from the proceedings of the fourth international symposium on sputtering and plasma processes (ISSP'97)

Multichannel process monitor for real-time film thickness and rate measurements in dry etching and deposition Selected papers revised from the proceedings of the fourth international symposium on sputtering and plasma processes (ISSP'97)

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Bibliographic Details
Published in:Vacuum Vol. 51; no. 4; pp. 497 - 502
Main Authors: HEINRICH, F, HEINZE, D, KOWALSKI, T, HOFFMANN, P, KOPPERSCHMIDT, P
Format: Journal Article
Language:English
Published: Oxford Elsevier 1998
Subjects:
Cross-disciplinary physics: materials science; rheology
Exact sciences and technology
Ion and electron beam-assisted deposition; ion plating
Materials science
Methods of deposition of films and coatings; film growth and epitaxy
Physics
Surface cleaning, etching, patterning
Surface treatments
Process control
In situ
Instrumentation
Multichannel counter
Selectivity
Crystal growth from vapors
Experimental study
Real time
Thin films
Thickness
Plasma etching
Ion beam etching
Kinetics
Monitoring
Uniformity
Online Access:Get full text
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Description
ISSN:0042-207X
1879-2715