Stacking-fault formation and propagation in 4H-SiC PiN diodes : III-V Nitrides and Silicon Carbide

Stacking-fault formation and propagation in 4H-SiC PiN diodes : III-V Nitrides and Silicon Carbide

Saved in:
Bibliographic Details
Published in:Journal of electronic materials Vol. 31; no. 5; pp. 370 - 375
Main Authors: STAHLBUSH, R. E, FATEMI, M, FEDISON, J. B, ARTHUR, S. D, ROWLAND, L. B, WANG, S
Format: Conference Proceeding
Language:English
Published: New York, NY Institute of Electrical and Electronics Engineers 2002
Subjects:
Applied sciences
Diodes
Electronics
Exact sciences and technology
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Degradation
Silicon carbide
Electric stress
Stacking fault
Electroluminescence
p i n diode
Current density
Defect formation
Dislocation
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
ISSN:0361-5235
1543-186X