Self-assembly of compositionally modulated Ga{sub 1−x}Mn{sub x}As multilayers during molecular beam epitaxy

GaMnAs structures were grown on GaAs(100) substrates by molecular beam epitaxy employing different growth parameters. We studied manganese incorporation employing secondary ion mass spectrometry (SIMS). At a growth temperature of 300 °C, we observed a self-assembled modulation of the manganese conce...

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Bibliographic Details
Published in:	Applied physics letters Vol. 103; no. 19
Main Authors:	Gallardo-Hernández, S., Martinez-Velis, I., Ramirez-Lopez, M., Lopez-Lopez, M., Kudriatsev, Y., Escobosa-Echavarria, A., Luiz Morelhao, S.
Format:	Journal Article
Language:	English
Published:	United States 04-11-2013
Subjects:	ABSORPTION SPECTROSCOPY CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY DECOMPOSITION DEPTH GALLIUM ARSENIDES ION MICROPROBE ANALYSIS LAYERS MANGANESE MASS SPECTRA MASS SPECTROSCOPY MATERIALS SCIENCE MOLECULAR BEAM EPITAXY RESOLUTION SEGREGATION SEMICONDUCTOR MATERIALS SPUTTERING X-RAY DIFFRACTION X-RAY SPECTROSCOPY
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Summary:	GaMnAs structures were grown on GaAs(100) substrates by molecular beam epitaxy employing different growth parameters. We studied manganese incorporation employing secondary ion mass spectrometry (SIMS). At a growth temperature of 300 °C, we observed a self-assembled modulation of the manganese concentration. SIMS depth profiles were analyzed employing a depth resolution function taking into account sputtering-induced broadening of the original distribution and segregation. We found a Mn segregation length along the growth direction of ∼4 nm. The presence of GaMnAs multilayers was corroborated by high-resolution x-ray diffraction. Spinodal decomposition is a possible mechanism for the spontaneous formation of the multilayer structure.
ISSN:	0003-6951 1077-3118
DOI:	10.1063/1.4829922