An Inclusive Structural Analysis on the Design of 1.2kV 4H-SiC Planar MOSFETs

An Inclusive Structural Analysis on the Design of 1.2kV 4H-SiC Planar MOSFETs

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Bibliographic Details
Published in:IEEE journal of the Electron Devices Society Vol. 9
Main Authors: Kim, Dongyoung, yun, Nick, Jang, Seung Yup, Morgan, Adam J., Sung, Woongje
Format: Journal Article
Language:English
Published: United States IEEE 01-01-2021
Subjects:
Engineering
Online Access:Get full text
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Summary:Not provided.
Bibliography:USDOE Office of Energy Efficiency and Renewable Energy (EERE)
EE0008710
ISSN:2168-6734
2168-6734