High Output Power and High Fundamental Leakage Suppression Frequency Doubler MMIC for E-Band Transceiver

• Published in: Journal of Electromagnetic Engineering and Science Vol. 14; no. 4; pp. 342 - 345
• Main Authors: Chang, Dong-Pil, Yom, In-Bok
• Format: Journal Article
• Language: Korean
• Published: 2014
• Subjects: E-Band Transceiver; Frequency Multiplier; Monolithic Microwave Integrated Circuit (MMIC); Active Doubler
• ISSN: 2671-7255; 2671-7263

An active frequency doubler monolithic microwave integrated circuit (MMIC) for E-band transceiver applications is presented in this letter. This MMIC has been fabricated in a commercial $0.1-{\mu}m$ GaAs pseudomorphic high electron mobility transistor (pHEMT) process on a 2-mil thick substrate wafer. The fabricated MMIC chip has been measured to have a high output power performance of over 13 dBm with a high fundamental leakage suppression of more than 38 dBc in the frequency range of 71 to 86 GHz under an input signal condition of 10 dBm. A microstrip coupled line is used at the output circuit of the doubler section to implement impedance matching and simultaneously enhance the fundamental leakage suppression. The fabricated chip is has a size of $2.5mm{\times}1.2mm$.