112 GBaud (224 Gb/s) large output swing InP DHBT PAM-4 DAC-driver

In this paper, we report on the design, optimisation and and electrical measurements of a PAM-4 DAC-driver fabricated in 0.7-μm InP/GaAsSb DHBT technology, with the capability to directly drive an electro-optical modulator. Circuit measurements in PAM-4 mode show high diagram quality at 90 GBaud (18...

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Bibliographic Details
Published in:	2022 24th International Microwave and Radar Conference (MIKON) pp. 1 - 4
Main Authors:	Konczykowska, A., Hersent, R., Jorge, F., Riet, M., Nodjiadjim, V., Mismer, C., Bolognesi, C. R., Ostinelli, O., Dupuy, J.-Y.
Format:	Conference Proceeding
Language:	English
Published:	Warsaw University of Technology 12-09-2022
Subjects:	DH-HEMTs Double Heterojunction Bipolar Transistor (DHBT) high speed circuits III-V semiconductor materials Indium Phosphide (InP) integrated circuit (IC) Modulation modulator-driver optical communications PAM-4 format Power demand Power measurement Predistortion Quadrature amplitude modulation
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Summary:	In this paper, we report on the design, optimisation and and electrical measurements of a PAM-4 DAC-driver fabricated in 0.7-μm InP/GaAsSb DHBT technology, with the capability to directly drive an electro-optical modulator. Circuit measurements in PAM-4 mode show high diagram quality at 90 GBaud (180 Gb/s) with a record 5.5-V pp differential output swing. An over 12-dB gain control capability is shown. Moreover, a record 3.35-V pp output swing is obtained in PAM-4 at 112 GBaud (224 Gb/s). Power consumption is 1.1 and 0.6 W for two operating symbol-rates respectively.