High-throughput low temperature tungsten deposition process for 0.25 /spl mu/m technology

A new high-throughput, low temperature tungsten deposition process is presented. Excellent step coverage is obtained because of the low temperature and high pressure. No plug seams are observed. Therefore, this process is particularly suitable for post W-CMP processing, as plug seam attack will be m...

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Bibliographic Details

Published in:	1999 IEEE International Symposium on Semiconductor Manufacturing Conference Proceedings (Cat No.99CH36314) pp. 427 - 428
Main Authors:	Elst, W., Van Zomeren, A., Berenbaum, D., Roede, H., Schmitz, J., Ellwanger, R.
Format:	Conference Proceeding
Language:	English
Published:	IEEE 1999
Subjects:	Large Hadron Collider Optical films Optical microscopy Plugs Pollution measurement Scanning electron microscopy Semiconductor materials Stress measurement Temperature Tungsten
Online Access:	Get full text
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