High-throughput low temperature tungsten deposition process for 0.25 /spl mu/m technology

High-throughput low temperature tungsten deposition process for 0.25 /spl mu/m technology

A new high-throughput, low temperature tungsten deposition process is presented. Excellent step coverage is obtained because of the low temperature and high pressure. No plug seams are observed. Therefore, this process is particularly suitable for post W-CMP processing, as plug seam attack will be m...

Full description

Saved in:
Bibliographic Details
Published in:1999 IEEE International Symposium on Semiconductor Manufacturing Conference Proceedings (Cat No.99CH36314) pp. 427 - 428
Main Authors: Elst, W., Van Zomeren, A., Berenbaum, D., Roede, H., Schmitz, J., Ellwanger, R.
Format: Conference Proceeding
Language:English
Published: IEEE 1999
Subjects:
Large Hadron Collider
Optical films
Optical microscopy
Plugs
Pollution measurement
Scanning electron microscopy
Semiconductor materials
Stress measurement
Temperature
Tungsten
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Abstract A new high-throughput, low temperature tungsten deposition process is presented. Excellent step coverage is obtained because of the low temperature and high pressure. No plug seams are observed. Therefore, this process is particularly suitable for post W-CMP processing, as plug seam attack will be minimal. Electrical measurements have demonstrated that this new process has the same process capability in terms of electrical performance and yield.
AbstractList A new high-throughput, low temperature tungsten deposition process is presented. Excellent step coverage is obtained because of the low temperature and high pressure. No plug seams are observed. Therefore, this process is particularly suitable for post W-CMP processing, as plug seam attack will be minimal. Electrical measurements have demonstrated that this new process has the same process capability in terms of electrical performance and yield.
Author Ellwanger, R.
Schmitz, J.
Elst, W.
Roede, H.
Van Zomeren, A.
Berenbaum, D.
Author_xml – sequence: 1
  givenname: W.
  surname: Elst
  fullname: Elst, W.
  organization: MOS4YOU Dept., Philips Semicond., Nijmegen, Netherlands
– sequence: 2
  givenname: A.
  surname: Van Zomeren
  fullname: Van Zomeren, A.
– sequence: 3
  givenname: D.
  surname: Berenbaum
  fullname: Berenbaum, D.
– sequence: 4
  givenname: H.
  surname: Roede
  fullname: Roede, H.
– sequence: 5
  givenname: J.
  surname: Schmitz
  fullname: Schmitz, J.
– sequence: 6
  givenname: R.
  surname: Ellwanger
  fullname: Ellwanger, R.
BookMark eNp9jrtOw0AQRUciSCSQHlHND9ie9WZju0agUFCFAqrIChN7kb2z2odQ_p5IUHObUxwd6a5g4cQxwL2iUinqqpf9_rVUXdeVLbVt3VzBipqWtNmQ3i5gqUytC2P0-w2sY_yiyzaGGr1dwsfODmORxiB5GH1OOMk3Jp49hz7lwJiyG2Jih5_sJdpkxaEPcuQY8SQBqawNVtFPOOdqvqTH0ckkw_kOrk_9FHn9x1t4eH56e9wVlpkPPti5D-fD72H9r_wBYRdFbQ
ContentType Conference Proceeding
DBID 6IE
6IH
CBEJK
RIE
RIO
DOI 10.1109/ISSM.1999.808827
DatabaseName IEEE Electronic Library (IEL) Conference Proceedings
IEEE Proceedings Order Plan (POP) 1998-present by volume
IEEE Xplore All Conference Proceedings
IEEE Electronic Library Online
IEEE Proceedings Order Plans (POP) 1998-present
DatabaseTitleList
Database_xml – sequence: 1
  dbid: RIE
  name: IEEE Electronic Library Online
  url: http://ieeexplore.ieee.org/Xplore/DynWel.jsp
  sourceTypes: Publisher
DeliveryMethod fulltext_linktorsrc
Discipline Engineering
EndPage 428
ExternalDocumentID 808827
GroupedDBID 29I
6IE
6IF
6IH
6IK
6IL
6IM
6IN
AAJGR
ADZIZ
ALMA_UNASSIGNED_HOLDINGS
BEFXN
BFFAM
BGNUA
BKEBE
BPEOZ
CBEJK
CHZPO
IEGSK
IJVOP
IPLJI
M43
OCL
RIE
RIL
RIO
RNS
ID FETCH-ieee_primary_8088273
IEDL.DBID RIE
ISBN 0780354036
9780780354036
ISSN 1523-553X
IngestDate Wed Jun 26 19:25:59 EDT 2024
IsPeerReviewed false
IsScholarly true
Language English
LinkModel DirectLink
MergedId FETCHMERGED-ieee_primary_8088273
ParticipantIDs ieee_primary_808827
PublicationCentury 1900
PublicationDate 19990000
PublicationDateYYYYMMDD 1999-01-01
PublicationDate_xml – year: 1999
  text: 19990000
PublicationDecade 1990
PublicationTitle 1999 IEEE International Symposium on Semiconductor Manufacturing Conference Proceedings (Cat No.99CH36314)
PublicationTitleAbbrev ISSM
PublicationYear 1999
Publisher IEEE
Publisher_xml – name: IEEE
SSID ssj0000450736
ssj0020397
Score 2.8990698
Snippet A new high-throughput, low temperature tungsten deposition process is presented. Excellent step coverage is obtained because of the low temperature and high...
SourceID ieee
SourceType Publisher
StartPage 427
SubjectTerms Large Hadron Collider
Optical films
Optical microscopy
Plugs
Pollution measurement
Scanning electron microscopy
Semiconductor materials
Stress measurement
Temperature
Tungsten
Title High-throughput low temperature tungsten deposition process for 0.25 /spl mu/m technology
URI https://ieeexplore.ieee.org/document/808827
hasFullText 1
inHoldings 1
isFullTextHit
isPrint
link http://sdu.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwlV07T8MwED6RTrAApQjKQx5Y3bh5OPYMrcoAQgpDmaokvkxtEtFE_H1s5wFIXdiSDM4pZ-XuPt_3HcCDx3KeyUTRbD5HGiQypEIlnKKJvZgF2u2GnLyKo9e1eFoEvc625cIgom0-w5m5tGf5qswaA5W5wuSDkQNOJEVL1RrgFJ2Z6M3Kh1qL-e1cFV1n0TD017ZiF8ygHD7vhHeG-_74kkn3OY5fDINP7yD7sj9DV2zMWZ7-y9ozmPxw98jbEJXO4QiLMZz8kh28gA_T3EG7CT1VU5Nt-UWMRlUnsExq_QfQ3i-Iwr6pi1Qto4DoJJewmRcSd19tya5xd6Qe4PkJTJeL98cVNXZuqlbJYtOa6F_CqCgLvAKSRMxDxblIAxmwNE11vpLrb5VzjomU2TWMDywwPfj0Bo5bjQODV9zCqP5s8A6cvWrure--AZcJmHk
link.rule.ids 310,311,782,786,791,792,798,4056,4057,27936,54770
linkProvider IEEE
linkToHtml http://sdu.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwlV1LT4NAEJ7YelAvaq3R-tqD1y1bHguctQ2NbWNCD_VEeAynFoiF-PfdXR5q0os34LBMmA0z8-183wA86yzlsRsmNJ5MkJqha1EnCTlFGXsxNoXbJTnZ8-3Vxnmdmq3OtuLCIKJqPsOxvFRn-UkeVxIq0xyZD9o9OLZM22Y1WasDVERuIrYr76otZtSTVUSlRS3L2Kia3WES5zB4I73T3bcHmMzV5r6_lBw-sYfU6_6MXVFRZ3b-L3svYPjD3iPvXVy6hCPMBnD2S3jwCj5kewdtZvQUVUm2-ReRKlWNxDIpxT9A-D8jCbZtXaSoOQVEpLmEjXWLaPtiS3aVtiNlB9APYTSbrl88Ku0MilrLIqhNNK6hn-UZ3gAJbaZjwrkTma7JoigSGUsqvlXKOYauG9_C4MACo4NPn-DEWy8XwWK-eruD01rxQKIX99AvPyt8gN4-qR6VH78BxdibxA
openUrl ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Abook&rft.genre=proceeding&rft.title=1999+IEEE+International+Symposium+on+Semiconductor+Manufacturing+Conference+Proceedings+%28Cat+No.99CH36314%29&rft.atitle=High-throughput+low+temperature+tungsten+deposition+process+for+0.25+%2Fspl+mu%2Fm+technology&rft.au=Elst%2C+W.&rft.au=Van+Zomeren%2C+A.&rft.au=Berenbaum%2C+D.&rft.au=Roede%2C+H.&rft.date=1999-01-01&rft.pub=IEEE&rft.isbn=9780780354036&rft.issn=1523-553X&rft.spage=427&rft.epage=428&rft_id=info:doi/10.1109%2FISSM.1999.808827&rft.externalDocID=808827
thumbnail_l http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/lc.gif&issn=1523-553X&client=summon
thumbnail_m http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/mc.gif&issn=1523-553X&client=summon
thumbnail_s http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/sc.gif&issn=1523-553X&client=summon