High-throughput low temperature tungsten deposition process for 0.25 /spl mu/m technology

High-throughput low temperature tungsten deposition process for 0.25 /spl mu/m technology

A new high-throughput, low temperature tungsten deposition process is presented. Excellent step coverage is obtained because of the low temperature and high pressure. No plug seams are observed. Therefore, this process is particularly suitable for post W-CMP processing, as plug seam attack will be m...

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Bibliographic Details
Published in:1999 IEEE International Symposium on Semiconductor Manufacturing Conference Proceedings (Cat No.99CH36314) pp. 427 - 428
Main Authors: Elst, W., Van Zomeren, A., Berenbaum, D., Roede, H., Schmitz, J., Ellwanger, R.
Format: Conference Proceeding
Language:English
Published: IEEE 1999
Subjects:
Large Hadron Collider
Optical films
Optical microscopy
Plugs
Pollution measurement
Scanning electron microscopy
Semiconductor materials
Stress measurement
Temperature
Tungsten
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Summary:A new high-throughput, low temperature tungsten deposition process is presented. Excellent step coverage is obtained because of the low temperature and high pressure. No plug seams are observed. Therefore, this process is particularly suitable for post W-CMP processing, as plug seam attack will be minimal. Electrical measurements have demonstrated that this new process has the same process capability in terms of electrical performance and yield.
ISBN:0780354036
9780780354036
ISSN:1523-553X
DOI:10.1109/ISSM.1999.808827