Simple phase-space trajectory calculation for Monte Carlo device simulation including screened impurity scattering

Simple phase-space trajectory calculation for Monte Carlo device simulation including screened impurity scattering

A phase-space-step trajectory calculation within the scheme of self-scattering is presented. In addition, impurity scattering is approximated by the inverse microscopic relaxation time of the Ridley model. The resulting Monte Carlo algorithm is faster by a factor in the order of 15 than one, which i...

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Bibliographic Details
Published in:1999 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD'99 (IEEE Cat. No.99TH8387) pp. 31 - 34
Main Authors: Bufler, F.M., Yoder, P.D., Fichtuer, W.
Format: Conference Proceeding
Language:English
Published: IEEE 1999
Subjects:
Ballistic transport
Computational modeling
Doping profiles
Electrons
Impurities
Microscopy
Monte Carlo methods
MOSFET circuits
Particle scattering
Semiconductor process modeling
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Summary:A phase-space-step trajectory calculation within the scheme of self-scattering is presented. In addition, impurity scattering is approximated by the inverse microscopic relaxation time of the Ridley model. The resulting Monte Carlo algorithm is faster by a factor in the order of 15 than one, which integrates the equations of motion via a second-order Runge-Kutta technique and treats impurity scattering rigorously.
ISBN:4930813980
9784930813985
DOI:10.1109/SISPAD.1999.799252