Investigation of the surface potential and the depletion layer of Silicon-Schottky barrier diode - Evaluation by scanning probe microscopy

We have developed a scanning-probe microscope (SPM) that combines atomic-force microscopy (AFM) with both Kelvin-probe force microscopy (KFM - to measure the surface potential). Surface physical characteristics of a commercial Si Schottky barrier diode (Si-SBD), with and without an applied reverse b...

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Bibliographic Details

Published in:	2016 19th International Conference on Electrical Machines and Systems (ICEMS) pp. 1 - 5
Main Authors:	Uruma, Takeshi, Satoh, Nobuo, Komori, Kyouhei, Oda, Akinori, Yamamoto, Hidekazu
Format:	Conference Proceeding
Language:	English
Published:	The Institute of Electrical Engineers of Japan 01-11-2016
Subjects:	Anodes Cathodes Electric potential Electron traps Power device Scanning probe microscopy Schottky diodes Silicon Silicon-Schottky barrier diode Surface topography Trapped charge
Online Access:	Get full text
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