Investigation of the surface potential and the depletion layer of Silicon-Schottky barrier diode - Evaluation by scanning probe microscopy

Investigation of the surface potential and the depletion layer of Silicon-Schottky barrier diode - Evaluation by scanning probe microscopy

We have developed a scanning-probe microscope (SPM) that combines atomic-force microscopy (AFM) with both Kelvin-probe force microscopy (KFM - to measure the surface potential). Surface physical characteristics of a commercial Si Schottky barrier diode (Si-SBD), with and without an applied reverse b...

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Bibliographic Details
Published in:2016 19th International Conference on Electrical Machines and Systems (ICEMS) pp. 1 - 5
Main Authors: Uruma, Takeshi, Satoh, Nobuo, Komori, Kyouhei, Oda, Akinori, Yamamoto, Hidekazu
Format: Conference Proceeding
Language:English
Published: The Institute of Electrical Engineers of Japan 01-11-2016
Subjects:
Anodes
Cathodes
Electric potential
Electron traps
Power device
Scanning probe microscopy
Schottky diodes
Silicon
Silicon-Schottky barrier diode
Surface topography
Trapped charge
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Summary:We have developed a scanning-probe microscope (SPM) that combines atomic-force microscopy (AFM) with both Kelvin-probe force microscopy (KFM - to measure the surface potential). Surface physical characteristics of a commercial Si Schottky barrier diode (Si-SBD), with and without an applied reverse bias, were measured over the same area by the AFM/KFM system. We thus investigated that influence of applied bias voltage and carrier trapped in the surface state.