A 1 mu m CMOS/SOI 64 K SRAM with 10 nA standby current

A 1 mu m CMOS/SOI 64 K SRAM with 10 nA standby current

Summary form only given. The successful design and fabrication of a 64 K SRAM on SIMOX material is discussed. The advantage of the small junction area resulting from mesa isolation is most evident in the very low standby current. An impressively high yield for first-pass material in a research wafer...

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Published in:IEEE SOS/SOI Technology Conference pp. 137 - 138
Main Authors: Houston, T.W., Lu, H., Mei, P., Blake, T.G.W., Hite, L.R., Sundaresan, R., Matloubiam, M., Bailey, W.E., Liu, J., Peterson, A., Pollack, G.
Format: Conference Proceeding
Language:English
Published: IEEE 1989
Subjects:
Capacitance
CMOS technology
DNA
Fabrication
Power dissipation
Probes
Production
Random access memory
Silicides
Voltage
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Abstract Summary form only given. The successful design and fabrication of a 64 K SRAM on SIMOX material is discussed. The advantage of the small junction area resulting from mesa isolation is most evident in the very low standby current. An impressively high yield for first-pass material in a research wafer fabrication area was obtained. Aspects of the design relating to the SOI characteristics are discussed and full characterization results are presented.< >
AbstractList Summary form only given. The successful design and fabrication of a 64 K SRAM on SIMOX material is discussed. The advantage of the small junction area resulting from mesa isolation is most evident in the very low standby current. An impressively high yield for first-pass material in a research wafer fabrication area was obtained. Aspects of the design relating to the SOI characteristics are discussed and full characterization results are presented.< >
Author Bailey, W.E.
Blake, T.G.W.
Peterson, A.
Houston, T.W.
Lu, H.
Mei, P.
Hite, L.R.
Pollack, G.
Sundaresan, R.
Matloubiam, M.
Liu, J.
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  surname: Lu
  fullname: Lu, H.
  organization: Texas Instrum. Inc., Dallas, TX, USA
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  surname: Mei
  fullname: Mei, P.
  organization: Texas Instrum. Inc., Dallas, TX, USA
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  surname: Blake
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  organization: Texas Instrum. Inc., Dallas, TX, USA
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  surname: Hite
  fullname: Hite, L.R.
  organization: Texas Instrum. Inc., Dallas, TX, USA
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  surname: Sundaresan
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  organization: Texas Instrum. Inc., Dallas, TX, USA
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  organization: Texas Instrum. Inc., Dallas, TX, USA
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  givenname: W.E.
  surname: Bailey
  fullname: Bailey, W.E.
  organization: Texas Instrum. Inc., Dallas, TX, USA
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  givenname: J.
  surname: Liu
  fullname: Liu, J.
  organization: Texas Instrum. Inc., Dallas, TX, USA
– sequence: 10
  givenname: A.
  surname: Peterson
  fullname: Peterson, A.
  organization: Texas Instrum. Inc., Dallas, TX, USA
– sequence: 11
  givenname: G.
  surname: Pollack
  fullname: Pollack, G.
  organization: Texas Instrum. Inc., Dallas, TX, USA
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Snippet Summary form only given. The successful design and fabrication of a 64 K SRAM on SIMOX material is discussed. The advantage of the small junction area...
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StartPage 137
SubjectTerms Capacitance
CMOS technology
DNA
Fabrication
Power dissipation
Probes
Production
Random access memory
Silicides
Voltage
Title A 1 mu m CMOS/SOI 64 K SRAM with 10 nA standby current
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