Direct channel length determination of sub-100 nm MOS devices using scanning capacitance microscopy

As MOSFET channel lengths are scaled to below 100 nm, the determination of the effective channel length, L/sub 0/ becomes increasingly important. We have studied cross-sectioned MOSFETs with gate lengths down to 90 nm using scanning capacitance microscopy (SCM), and show the first images of these st...

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Published in:1998 Symposium on VLSI Technology Digest of Technical Papers (Cat. No.98CH36216) pp. 138 - 139
Main Authors: Kleiman, R.N., O'Malley, M.L., Baumann, F.H., Garno, J.P., Timp, W.G., Timp, G.L.
Format: Conference Proceeding
Language:English
Published: IEEE 1998
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Abstract As MOSFET channel lengths are scaled to below 100 nm, the determination of the effective channel length, L/sub 0/ becomes increasingly important. We have studied cross-sectioned MOSFETs with gate lengths down to 90 nm using scanning capacitance microscopy (SCM), and show the first images of these state-of-the-art devices. Using a device simulator we have quantitatively established the relation between L/sub 0/ and the SCM response in the channel region, allowing us to determine L/sub 0/ from the SCM measurements. We have explored the ultimate resolution attainable using this technique; experimentally, using very sharp probe tips and with numerical simulations.
AbstractList As MOSFET channel lengths are scaled to below 100 nm, the determination of the effective channel length, L/sub 0/ becomes increasingly important. We have studied cross-sectioned MOSFETs with gate lengths down to 90 nm using scanning capacitance microscopy (SCM), and show the first images of these state-of-the-art devices. Using a device simulator we have quantitatively established the relation between L/sub 0/ and the SCM response in the channel region, allowing us to determine L/sub 0/ from the SCM measurements. We have explored the ultimate resolution attainable using this technique; experimentally, using very sharp probe tips and with numerical simulations.
Author Garno, J.P.
Timp, G.L.
Kleiman, R.N.
O'Malley, M.L.
Baumann, F.H.
Timp, W.G.
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  surname: Timp
  fullname: Timp, G.L.
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Snippet As MOSFET channel lengths are scaled to below 100 nm, the determination of the effective channel length, L/sub 0/ becomes increasingly important. We have...
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StartPage 138
SubjectTerms Capacitance
Doping
Electrodes
Geometry
Microscopy
MOS devices
MOSFET circuits
P-n junctions
Spatial resolution
Voltage
Title Direct channel length determination of sub-100 nm MOS devices using scanning capacitance microscopy
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