Direct channel length determination of sub-100 nm MOS devices using scanning capacitance microscopy
As MOSFET channel lengths are scaled to below 100 nm, the determination of the effective channel length, L/sub 0/ becomes increasingly important. We have studied cross-sectioned MOSFETs with gate lengths down to 90 nm using scanning capacitance microscopy (SCM), and show the first images of these st...
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Published in: | 1998 Symposium on VLSI Technology Digest of Technical Papers (Cat. No.98CH36216) pp. 138 - 139 |
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1998
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Abstract | As MOSFET channel lengths are scaled to below 100 nm, the determination of the effective channel length, L/sub 0/ becomes increasingly important. We have studied cross-sectioned MOSFETs with gate lengths down to 90 nm using scanning capacitance microscopy (SCM), and show the first images of these state-of-the-art devices. Using a device simulator we have quantitatively established the relation between L/sub 0/ and the SCM response in the channel region, allowing us to determine L/sub 0/ from the SCM measurements. We have explored the ultimate resolution attainable using this technique; experimentally, using very sharp probe tips and with numerical simulations. |
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AbstractList | As MOSFET channel lengths are scaled to below 100 nm, the determination of the effective channel length, L/sub 0/ becomes increasingly important. We have studied cross-sectioned MOSFETs with gate lengths down to 90 nm using scanning capacitance microscopy (SCM), and show the first images of these state-of-the-art devices. Using a device simulator we have quantitatively established the relation between L/sub 0/ and the SCM response in the channel region, allowing us to determine L/sub 0/ from the SCM measurements. We have explored the ultimate resolution attainable using this technique; experimentally, using very sharp probe tips and with numerical simulations. |
Author | Garno, J.P. Timp, G.L. Kleiman, R.N. O'Malley, M.L. Baumann, F.H. Timp, W.G. |
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Snippet | As MOSFET channel lengths are scaled to below 100 nm, the determination of the effective channel length, L/sub 0/ becomes increasingly important. We have... |
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StartPage | 138 |
SubjectTerms | Capacitance Doping Electrodes Geometry Microscopy MOS devices MOSFET circuits P-n junctions Spatial resolution Voltage |
Title | Direct channel length determination of sub-100 nm MOS devices using scanning capacitance microscopy |
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