Estimation of the /spl Gamma/-X crossover composition in disordered (Al/sub x/Ga/sub 1-x/)/sub 0.5/In/sub 0.5/P using n-i-n diodes

Estimation of the /spl Gamma/-X crossover composition in disordered (Al/sub x/Ga/sub 1-x/)/sub 0.5/In/sub 0.5/P using n-i-n diodes

The conduction band offset between (Al/sub x/Ga/sub 1-x/)/sub 0.5/In/sub 0.5/P and Ga/sub 0.5/In/sub 0.5/P has been determined from the I-V characteristics of n-i-n diodes fabricated from these materials. These measurements were made as a function of temperature for various aluminium compositions, x...

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Bibliographic Details
Published in:International Electron Devices Meeting. IEDM Technical Digest pp. 393 - 395
Main Authors: Morrison, A.P., Lambkin, J.D., van der Poel, C.J., Valster, A.
Format: Conference Proceeding
Language:English
Published: IEEE 1997
Subjects:
Aluminum
Electron emission
Energy measurement
Gallium alloys
Laboratories
Microelectronics
Photonic band gap
Semiconductor diodes
Temperature
Thermionic emission
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Summary:The conduction band offset between (Al/sub x/Ga/sub 1-x/)/sub 0.5/In/sub 0.5/P and Ga/sub 0.5/In/sub 0.5/P has been determined from the I-V characteristics of n-i-n diodes fabricated from these materials. These measurements were made as a function of temperature for various aluminium compositions, x, thus providing an estimate of the /spl Gamma/-X crossover composition in the AlGaInP.
ISBN:9780780341005
0780341007
ISSN:0163-1918
2156-017X
DOI:10.1109/IEDM.1997.650407