Behavior of indium in thin SOI films

• Published in: 1997 IEEE International SOI Conference Proceedings pp. 68 - 69
• Main Authors: Jacobs, J.B., Schiebel, R., Joyner, K., Houston, T.W.
• Format: Conference Proceeding
• Language: English
• Published: IEEE 1997
• Subjects: Annealing; Doping profiles; Implants; Indium; Jacobian matrices; Semiconductor films; Shape; Silicon; Temperature; Thin film transistors
• ISBN: 9780780339385; 078033938X
• ISSN: 1078-621X; 2577-2295
• DOI: 10.1109/SOI.1997.634936

The behavior of indium implanted in silicon-on-insulator (SOI) material is explored by using SIMS analysis to obtain the doping concentration profile as a function of the silicon film thickness for a fixed implant depth, and as a function of the implant depth for a fixed silicon film thickness. Based on the experimental data, the following observations can be made. Indium can be highly mobile and can diffuse throughout the buried oxide. As a result, there is a dopant depletion zone near the buried oxide interface. The indium doping profile can be practically invariant under certain implant conditions in thicker films. As a result of indium's highly mobile nature, a lower temperature process is necessary to maintain the as-implanted indium profile in thin-film SOI transistors.