Prospects of designing radiation-hard memory devices, made by OJSC "Integral"

Prospects of designing radiation-hard memory devices, made by OJSC "Integral"

The characteristics are indicated of radiation-hard memory devices, made by OJSC "Integral" with consideration of the status and prospects of the news designs of the memory microcircuits.

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Bibliographic Details
Published in:2011 21st International Crimean Conference "Microwave & Telecommunication Technology" pp. 867 - 868
Main Authors: Belous, A. I., Lozitsky, E. G., Turtsevich, A. S., Shvedau, S. V., Usov, G. I.
Format: Conference Proceeding
Language:English
Published: IEEE 01-09-2011
Subjects:
Assembly
EPROM
Ferroelectric films
Nonvolatile memory
Random access memory
Silicon
Silicon on insulator technology
Online Access:Get full text
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Description
Summary:The characteristics are indicated of radiation-hard memory devices, made by OJSC "Integral" with consideration of the status and prospects of the news designs of the memory microcircuits.
ISBN:9781457708831
1457708833