Ku-band Up-converter Multi-function MMIC using 0.25 µm SiGe BiCMOS Technology

Ku-band Up-converter Multi-function MMIC using 0.25 µm SiGe BiCMOS Technology

Single Ku-band multi-function transmitter (Tx) MMIC for phased -array applications is designed using 0.25 μm SiGe BiCMOS technology. The MMIC includes gain amplifiers, a power amplifier, digital phase shifters, digital attenuators, and a serial-to-parallel converter. The Tx MMIC exhibits gain of 19...

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Bibliographic Details
Published in:2009 Asia Pacific Microwave Conference pp. 1164 - 1167
Main Authors: YounSub Noh, ManSeok Uhm, InBok Yom
Format: Conference Proceeding
Language:English
Published: IEEE 01-12-2009
Subjects:
Attenuator
Attenuators
BiCMOS integrated circuits
Frequency
Gain control
Germanium silicon alloys
Ku-band
MMICs
phase shifter
Phase shifters
phased-array
power amplifier
Power amplifiers
SiGe BiCMOS
Silicon germanium
Transmitters
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Description
Summary:Single Ku-band multi-function transmitter (Tx) MMIC for phased -array applications is designed using 0.25 μm SiGe BiCMOS technology. The MMIC includes gain amplifiers, a power amplifier, digital phase shifters, digital attenuators, and a serial-to-parallel converter. The Tx MMIC exhibits gain of 19 dB, P1dB of 21 dBm with phase and gain control functions over the Ku-band frequency of 13.5 GHz to 15 GHz. The power amplifier in a Tx MMIC was pre-designed and measured results showed a output P1dB of 21.5 dBm, gain of 14.5 dB and peak PAE of 29.1%.
ISBN:9781424428014
1424428017
ISSN:2165-4727
2165-4743
DOI:10.1109/APMC.2009.5384409