Circuit Design and FM Noise Characteristics of 20/30 GHz GaAs MESFET Multiplier Chains

Circuit Design and FM Noise Characteristics of 20/30 GHz GaAs MESFET Multiplier Chains

Multiplier chains for 20/30 GHz bands were developed using two-stage GaAs MESFET doublers. They provide 11 dBm output power with 4 dB gain at 18 GHz and 4 dBm output power with 5 dB loss at 30 GHz. Circuit design and FM noise characteristics will also be described.

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Bibliographic Details
Published in:1983 13th European Microwave Conference pp. 252 - 257
Main Authors: Shima, T., Takano, T., Katoh, T., Sugawara, H., Komizo, H.
Format: Conference Proceeding
Language:English
Published: IEEE 01-09-1983
Subjects:
Circuit noise
Circuit synthesis
FETs
Gallium arsenide
Impedance
MESFET circuits
Oscillators
Power generation
Power harmonic filters
Radio frequency
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Description
Summary:Multiplier chains for 20/30 GHz bands were developed using two-stage GaAs MESFET doublers. They provide 11 dBm output power with 4 dB gain at 18 GHz and 4 dBm output power with 5 dB loss at 30 GHz. Circuit design and FM noise characteristics will also be described.
DOI:10.1109/EUMA.1983.333236