Mask enhancer technology on ArF immersion tool for 45nm-node CMOS with 0.249/spl mu/m/sup 2/ SRAM contact layer fabrication

Mask enhancer technology on ArF immersion tool for 45nm-node CMOS with 0.249/spl mu/m/sup 2/ SRAM contact layer fabrication

We achieve the contact layer printing of 0.249/spl mu/m/sup 2/ SRAM by using mask enhancer (ME) technology and 0.85NA ArF immersion tool. In conclusion, we strongly propose that ME is one of the most effective solutions to perform 45nm-node contact printing with sufficient lithographic performance f...

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Bibliographic Details
Published in:Digest of Papers Microprocesses and Nanotechnology 2005 pp. 14 - 15
Main Authors: Yuito, T., Wiaux, V., Van Look, L., Vandenberghe, G., Irie, S., Matsuo, T., Misaka, A., Endo, M., Sasago, M.
Format: Conference Proceeding
Language:English
Published: IEEE 2005
Subjects:
Apertures
CMOS technology
Fabrication
Focusing
Isolation technology
Lighting
Manufacturing
Printing
Random access memory
Textile industry
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Summary:We achieve the contact layer printing of 0.249/spl mu/m/sup 2/ SRAM by using mask enhancer (ME) technology and 0.85NA ArF immersion tool. In conclusion, we strongly propose that ME is one of the most effective solutions to perform 45nm-node contact printing with sufficient lithographic performance for 45nm-node LSI manufacturing.
ISBN:4990247221
9784990247225
DOI:10.1109/IMNC.2005.203714