Singlemode Monolithically Quantum-Dot Vertical-Cavity Surface-Emitting Laser in 1.3 μm with Side-mode Suppression ratio & gt; 30dB

• Published in: 2005 International Topical Meeting on Microwave Photonics pp. 157 - 160
• Main Authors: Kuo, H.C., Lin, G., Tsai, W.K., Chang, Y.H., Peng, P.C., Lai, F., Yu, H.C., Yang, H.P., Lin, K.F., Chi, J.Y.
• Format: Conference Proceeding
• Language: English
• Published: IEEE 2005
• Subjects: bandwidth; Gallium arsenide; Laser modes; Optical fiber communication; Optical surface waves; Power generation; Quantum dots; single mode; surface emitting laser; Surface emitting lasers; Surface waves; Temperature; Vertical cavity surface emitting lasers
• ISBN: 8995004339; 9788995004333
• DOI: 10.1109/MWP.2005.203563

We present monolithically quantum-dot vertical-cavity surface-emitting laser (QD VCSELs) operating in the 1.3 μm optical communication wavelength. The QD VCSELs have adapted fully doped structure on GaAs substrate. The output power is ∼330 μW with slope efficiency of 0.18 W/A at room temperature. Single mode operation was obtained with side-mode suppression ratio of > 30 dB. Modulation bandwidth was also presented for the first time.