A solid state current sense for high current epi base power transistors
This paper concerns the development of a current sense device used in high current epi base power transistors. The device exhibits an output current proportional to the square root of input current. A theoretical derivation agrees very well with experimental results. A circuit is described which imp...
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Published in: | 1982 International Electron Devices Meeting pp. 92 - 95 |
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Main Authors: | , |
Format: | Conference Proceeding |
Language: | English |
Published: |
IRE
1982
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Subjects: | |
Online Access: | Get full text |
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Summary: | This paper concerns the development of a current sense device used in high current epi base power transistors. The device exhibits an output current proportional to the square root of input current. A theoretical derivation agrees very well with experimental results. A circuit is described which implements this device. The current sense device was used to investigate high current effects in the bipolar transistor. |
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DOI: | 10.1109/IEDM.1982.190221 |