3D Finite Thermal Modelling of SrSnO3 Field Effect Transistors

• Published in: 2024 Device Research Conference (DRC) pp. 1 - 2
• Main Authors: Bista, Bivek, Wen, Jiaxuan, Golani, Prafful, Liu, Fengdeng, Truttmann, Tristan, Jalan, Bharat, Koester, Steven, Pavlidis, Georges
• Format: Conference Proceeding
• Language: English
• Published: IEEE 24-06-2024
• Subjects: Finite element analysis; Numerical models; Photonic band gap; Solid modeling; Temperature; Thermoreflectance imaging; Three-dimensional displays
• ISSN: 2640-6853
• DOI: 10.1109/DRC61706.2024.10605354

SrSnO 3 (SSO) is an ultra-wide bandgap (≈ 4.1 eV) semiconductor that has potential applications in high power electronics and DUV optoelectronics [1] . However, the thermal properties of doped SSO thin films have not been extensively studied. Due to its high bandgap, self-heating can severely limit the device's performance and reliability. This study reports the thermal transport characteristics of SSO based metal-semiconductor field-effect transistors (MESFETs) through 3D finite modelling and compares them with experimental data obtained via Transient Thermoreflectance Imaging (TTI). TTI can be used to obtain surface temperature maps with high spatial (≈ 410 nm) and temporal (≈ 50 ns) resolution [2] , [3] . Therefore, the TTI technique was used to extract the gate and drain metal surface temperature under pulsed biasing (300 μs pulse width with 10% duty cycle), whereas the steady state temperature rise was numerically evaluated using a 3D Finite Element (FE) model in ANSYS Workbench.