Anisotropic Stresses in GaN Layers on an r-Al.sub.2O.sub.3 Substrate during Hydride Vapor Phase Epitaxy

• Published in: Semiconductors (Woodbury, N.Y.) Vol. 56; no. 3; p. 164
• Main Authors: Bessolov, V. N, Konenkova, E. V, Seredova, N. V, Panteleev, V. N, Scheglov, M. E
• Format: Journal Article
• Language: English
• Published: Springer 01-03-2022
• Subjects: Aluminum compounds; Anisotropy; Epitaxy; Liquors; Thermal properties
• ISSN: 1063-7826
• DOI: 10.1134/S106378262202004X

We report on the fabrication of nonpolar GaN(11â20) structures by hydride vapor phase epitaxy using an AlN buffer layer synthesized by metalorganic vapor-phase epitaxy on an r-Al.sub.2O.sub.3 substrate. It is shown that the elastic stresses in the GaN(11â20)/r-Al.sub.2O.sub.3 structure in the directions of the c and a axes of the layer have different values, correlate with the full widths at half maximum of the rocking curves in the X-ray diffraction spectra in these directions, and are caused by the anisotropy of the thermal expansion coefficients of the layer and substrate lattices.