Structure and Polarization Relaxation of [Ba.sub.0.5][Sr.sub.0.5][Nb.sub.2][O.sub.6]/Si Films

Structure and Polarization Relaxation of [Ba.sub.0.5][Sr.sub.0.5][Nb.sub.2][O.sub.6]/Si Films

The structure and dielectric characteristics of strontium barium niobate thin films deposited on single-crystalline silicon substrates without buffer layers are studied. It is found that the c axis in these heterostructures runs largely normally to the substrate surface and the a and b axes are rand...

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Bibliographic Details
Published in:Technical physics Vol. 63; no. 3; p. 407
Main Authors: Pavlenko, A.V, Stryukov, D.V, Mukhortov, V.M, Biryukov, S.V
Format: Journal Article
Language:English
Published: Springer 01-03-2018
Subjects:
Barium
Microelectromechanical systems
Silicon
Thin films
Online Access:Get full text
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Summary:The structure and dielectric characteristics of strontium barium niobate thin films deposited on single-crystalline silicon substrates without buffer layers are studied. It is found that the c axis in these heterostructures runs largely normally to the substrate surface and the a and b axes are randomly oriented in the plane of the substrate. The polarization relaxation in such heterostructures is investigated. It is shown that the film-substrate interface in the heterostructures grown by rf cathode sputtering may contain a low amount of long-lived charged defects. DOI: 10.1134/S1063784218030179
ISSN:1063-7842
DOI:10.1134/S1063784218030179