Manufacturing technology for contacts to silicon carbide

Manufacturing technology for contacts to silicon carbide

The authors classified the results of investigations of resistivity of ohmic contacts to silicon carbide made without any semiconductor surface modification. A set of contacts with better parameters were analysed. From the results of this analysis, some recommendations were made concerning optimal c...

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Bibliographic Details
Published in:Tekhnologiya i Konstruirovanie v Elektronnoi Apparature no. 1; pp. 25 - 37
Main Authors: Kudryk Ya.Ya, Bigun R. I., Kudryk R. Ya
Format: Journal Article
Language:English
Published: Politehperiodika 01-02-2013
Subjects:
ohmic contact
SiC
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Summary:The authors classified the results of investigations of resistivity of ohmic contacts to silicon carbide made without any semiconductor surface modification. A set of contacts with better parameters were analysed. From the results of this analysis, some recommendations were made concerning optimal contact-forming layers for p- and n-SiC types of 4H, 6H, 3C, 15R, 21R polytypes.
ISSN:2225-5818