Erratum: “Mitigation of Complementary Metal–Oxide–Semiconductor Variability with Metal Gate Metal–Oxide–Semiconductor Field-Effect Transistors”

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Bibliographic Details
Published in:Japanese Journal of Applied Physics Vol. 50; no. 11R; p. 119201
Main Authors: Yang, Ji-Woon, Park, Chang Seo, Smith, Casey E., Adhikari, Hemant, Huang, Jeff, Heh, Dawei, Majhi, Prashant, Jammy, Raj
Format: Journal Article
Language:English
Published: 01-11-2011
Online Access:Get full text
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Description
ISSN:0021-4922
1347-4065
DOI:10.7567/JJAP.50.119201