Synchrotron-Radiation-Induced Deposition of Etch-Protecting Film on Si in CF 4 Plasma

Carbonous film was deposited on silicon wafer in CF 4 plasma when the silicon wafer was irradiated by synchrotron radiation (SR). The deposition rate was 183 Å/min at a SR intensity of 1.43 W/cm 2 , DC discharge voltage of 700 V, discharge current of 6 mA and CF 4 gas pressure of 0.13 Torr. The film...

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Bibliographic Details
Published in:	Japanese Journal of Applied Physics Vol. 35; no. 2R; p. 765
Main Authors:	Chunlin Shao, Chunlin Shao, Shinzo Morita, Shinzo Morita, Tetsuo Soga, Tetsuo Soga, Ryoichi Inanami, Ryoichi Inanami, Shuzo Hattori, Shuzo Hattori
Format:	Journal Article
Language:	English
Published:	01-02-1996
Online Access:	Get full text
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Summary:	Carbonous film was deposited on silicon wafer in CF 4 plasma when the silicon wafer was irradiated by synchrotron radiation (SR). The deposition rate was 183 Å/min at a SR intensity of 1.43 W/cm 2 , DC discharge voltage of 700 V, discharge current of 6 mA and CF 4 gas pressure of 0.13 Torr. The film was characterized by Auger electron spectroscopy. The deposition mechanism of the film was due to photoexcitation of the silicon surface by SR irradiation.
ISSN:	0021-4922 1347-4065
DOI:	10.1143/JJAP.35.765