Investigation of Charge Trapping Induced Trap Generation in Si FeFET With Ferroelectric Hf 0.5 Zr 0.5 O 2

Investigation of Charge Trapping Induced Trap Generation in Si FeFET With Ferroelectric Hf 0.5 Zr 0.5 O 2

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Bibliographic Details
Published in:IEEE transactions on electron devices Vol. 71; no. 3; pp. 1845 - 1851
Main Authors: Jia, Xinpei, Chai, Junshuai, Duan, Jiahui, Sun, Xiaoqing, Shao, Xianzhou, Xiang, Jinjuan, Han, Kai, Wang, Yanrong, Xu, Hao, Wang, Xiaolei, Zhang, Jing, Wang, Wenwu
Format: Journal Article
Language:English
Published: 01-03-2024
Online Access:Get full text
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Description
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2024.3351599