Band gap and structure characterization of Tm_2O_3 films

Band gap and structure characterization of Tm_2O_3 films

Single crystalline Tm2O3 films were grown on Si （001） substrates by molecular beam epitaxy using metallic Tm source and atomic oxygen source. X-ray photoelectron spectroscopy, atomic force microscopy and high-resolution transmission electron microscopy were employed to investigate the compositions,...

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Bibliographic Details
Published in:中国稀土学报：英文版 Vol. 30; no. 3; pp. 233 - 235
Main Author: 汪建军 冀婷 朱燕艳 方泽波 任维义
Format: Journal Article
Language:English
Published: 2012
Subjects:
Si（001）衬底
X射线光电子能谱
分子束外延
原子力显微镜
带隙
电影
结构
表面形貌
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Summary:Single crystalline Tm2O3 films were grown on Si （001） substrates by molecular beam epitaxy using metallic Tm source and atomic oxygen source. X-ray photoelectron spectroscopy, atomic force microscopy and high-resolution transmission electron microscopy were employed to investigate the compositions, surface morphology and microstructure of the sample. A very flat surface with a root mean square roughness of 0.3 nm could be reached, and a sharp interface between the film and the Si substrate was achieved. The result of optical spectrum at ultraviolet and visible wavelengths showed that the band gap of the Tm2O3 film was 5.76 eV.
Bibliography:11-2788/TF
Single crystalline Tm2O3 films were grown on Si （001） substrates by molecular beam epitaxy using metallic Tm source and atomic oxygen source. X-ray photoelectron spectroscopy, atomic force microscopy and high-resolution transmission electron microscopy were employed to investigate the compositions, surface morphology and microstructure of the sample. A very flat surface with a root mean square roughness of 0.3 nm could be reached, and a sharp interface between the film and the Si substrate was achieved. The result of optical spectrum at ultraviolet and visible wavelengths showed that the band gap of the Tm2O3 film was 5.76 eV.
band gap Tm2O3 films high-k dielectric rare earths
ISSN:1002-0721
2509-4963