Gain Dependence of the Noise in the Single Electron Transistor

• Main Authors: Starmark, B, Henning, Torsten, Korotkov, A. N, Claeson, T, Delsing, P
• Format: Journal Article
• Language: English
• Published: 29-06-1998
• Subjects: Physics - Mesoscale and Nanoscale Physics
• DOI: 10.48550/arxiv.cond-mat/9806354

An extensive investigation of low frequency noise in single electron
transistors as a function of gain is presented. Comparing the output noise with
gain for a large number of bias points, it is found that the noise is dominated
by external charge noise. For low gains we find an additional noise
contribution which is compared to a model including resistance fluctuations. We
conclude that this excess noise is not only due to resistance fluctuations. For
one sample, we find a record low minimum charge noise of qn = 9*10^-6
e/sqrt(Hz) in the superconducting state and qn = 9*10^-6 e/sqrt(Hz) in the
normal state at a frequency of 4.4 kHz.