Photoactivation of color centers induced by laser irradiation in ion-implanted diamond
Split-vacancy color centers in diamond are promising solid state platforms for the implementation of photonic quantum technologies. These luminescent defects are commonly fabricated upon low energy ion implantation and subsequent thermal annealing. Their technological uptake will require the availab...
Saved in:
Main Authors: | , , , , , , |
---|---|
Format: | Journal Article |
Language: | English |
Published: |
10-09-2024
|
Subjects: | |
Online Access: | Get full text |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Summary: | Split-vacancy color centers in diamond are promising solid state platforms
for the implementation of photonic quantum technologies. These luminescent
defects are commonly fabricated upon low energy ion implantation and subsequent
thermal annealing. Their technological uptake will require the availability of
reliable methods for the controlled, large scale production of localized
individual photon emitters. This task is partially achieved by controlled ion
implantation to introduce selected impurities in the host material, and
requires the development of challenging beam focusing or collimation procedures
coupled with single-ion detection techniques. We report on protocol for the
direct optical activation of split-vacancy color centers in diamond via
localized processing with continuous wave laser at mW optical powers. We
demonstrate the activation of photoluminescent Mg- and Sn-related centers at
both the ensemble and single-photon emitter level in ion-implanted, high-purity
diamond crystals without further thermal processing. The proposed lithographic
method enables the activation of individual color centers at specific positions
of a large area sample by means of a relatively inexpensive equipment offering
the real-time, in situ monitoring of the process. |
---|---|
DOI: | 10.48550/arxiv.2409.06359 |