IP determination and 1+1 REMPI spectrum of SiO at 210-220 nm with implications for SiO$^{+}$ ion trap loading

• Main Authors: Stollenwerk, Patrick R, Antonov, Ivan O, Odom, Brian C
• Format: Journal Article
• Language: English
• Published: 24-10-2017
• Subjects: Physics - Atomic Physics
• DOI: 10.48550/arxiv.1710.08905

Journal of Molecular Spectroscopy Volume 355, January 2019, Pages
40-45 The 1+1 REMPI spectrum of SiO in the 210-220 nm range is recorded. Observed
bands are assigned to the $A-X$ vibrational bands $(v``=0-3, v`=5-10)$ and a
tentative assignment is given to the 2-photon transition from $X$ to the
n=12-13 $[X^{2}{\Sigma}^{+},v^{+}=1]$ Rydberg states at 216-217 nm. We estimate
the IP of SiO to be 11.59(1) eV. The SiO$^{+}$ cation has previously been
identified as a molecular candidate amenable to laser control. Our work allows
us to identify an efficient method for loading cold SiO$^{+}$ from an ablated
sample of SiO into an ion trap via the $(5,0)$ $A-X$ band at 213.977 nm.