Improvement in bias instabilities of Hf-silicate by dilute hydrochloric acid (500:1) post-deposition rinsing and its effect after high-pressure H 2 anneal

Improvement in bias instabilities of Hf-silicate by dilute hydrochloric acid (500:1) post-deposition rinsing and its effect after high-pressure H 2 anneal

We report that post-deposition rinsing of metalorganic-chemical-vapor-deposited Hf-silicate dielectric with HCl (500:1) improves mobility, bias instabilities, and stress-induced leakage current of metal-oxide-semiconductor field-effect transistors. Reduction of bulk charge trapping has primarily bee...

Full description

Saved in:
Bibliographic Details
Published in:Applied physics letters Vol. 87; no. 25; pp. 252903 - 252903-3
Main Authors: Akbar, Mohammad S., Moumen, Naim, Barnett, Joel, Lee, Byoung Hun, Lee, Jack C.
Format: Journal Article
Language:English
Published: American Institute of Physics 19-12-2005
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:We report that post-deposition rinsing of metalorganic-chemical-vapor-deposited Hf-silicate dielectric with HCl (500:1) improves mobility, bias instabilities, and stress-induced leakage current of metal-oxide-semiconductor field-effect transistors. Reduction of bulk charge trapping has primarily been attributed to this improvement. High-pressure H 2 anneal improved interface states significantly, with no effect on bulk trapping characteristics. HCl post-treatment did not show any apparent effect on interface state properties.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.2149974