Scaling of tunnel oxide thickness for flash EEPROMs realizing stress-induced leakage current reduction

Scaling of tunnel oxide thickness for flash EEPROMs realizing stress-induced leakage current reduction

Through the use of a lower impurity concentration in the gate poly-Si and lowering the post-annealing temperature, a highly reliable tunnel oxide process-technology has been developed. This process could become a key technology to realize high reliable Flash and NAND E super(2)PROM cells of 64Mb and...

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Bibliographic Details
Published in:Digest of technical papers - Symposium on VLSI Technology pp. 47 - 48
Main Authors: Watanabe, H, Aritome, S, Hemink, G J, Maruyama, T, Shirota, R
Format: Journal Article
Language:English
Published: 01-01-1994
Online Access:Get full text
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Summary:Through the use of a lower impurity concentration in the gate poly-Si and lowering the post-annealing temperature, a highly reliable tunnel oxide process-technology has been developed. This process could become a key technology to realize high reliable Flash and NAND E super(2)PROM cells of 64Mb and beyond.
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ISSN:0743-1562