Influence of graded interfaces on the exciton energy of type-I and type-II Si/Si1-x Ge x quantum wires

Influence of graded interfaces on the exciton energy of type-I and type-II Si/Si1-x Ge x quantum wires

The exciton properties of Si/Si1-xGex cylindrical quantum wires (QWRs) are calculated using the variational method and taking into account the existence of an interface layer between the materials. We consider two possibilities for the conduction band lineup, type-I and type-II. Our numerical result...

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Bibliographic Details
Published in:Journal of materials science Vol. 42; no. 7; pp. 2314 - 2317
Main Authors: Chaves, Andrey, Jusciane da Costa e Silva, José Alexander de King Freire, Degani, Marcos Henrique, Valder Nogueira Freire, Gil de Aquino Farias
Format: Journal Article
Language:English
Published: New York Springer Nature B.V 01-04-2007
Subjects:
Blue shift
Conduction bands
Excitons
Germanium
Materials science
Quantum wires
Silicon germanides
Variation
Online Access:Get full text
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Summary:The exciton properties of Si/Si1-xGex cylindrical quantum wires (QWRs) are calculated using the variational method and taking into account the existence of an interface layer between the materials. We consider two possibilities for the conduction band lineup, type-I and type-II. Our numerical results show that an interfacial fluctuation of 15Å in a Si0.85Ge0.15 (Si0.70Ge0.30) type-I (type-II) wire of 50Å wire radius leads to an exciton energy blue shift of the order of 10 (10) meV.
ISSN:0022-2461
1573-4803
DOI:10.1007/s10853-006-0617-3